Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Patent
1992-09-22
1993-06-29
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
257461, 257490, 257492, 257493, 257494, 257653, H01L 2934, H01L 2940, H01L 2714
Patent
active
052239195
ABSTRACT:
A photosensitive device includes a semiconductor body (1) having a first region (2) of one conductivity type adjacent a given surface (3) of the body with a second region (4) of the opposite conductivity type surrounding the first region (2) so as to form with the first region a main pn junction (5) terminating at the given surface (3), the main pn junction (5) being reverse-biassed in operation of the device. One or more further regions (6) of the one conductivity type surround the main pn junction (5) adjacent the given surface (3) so that each further region (6) forms a photosensitive pn junction (17) with the second region (4), the further region(s) (6) lying within the spread of the depletion region of the main pn junction (5) when the main pn junction (5) is reverse-biassed in operation of the device so as to increase the breakdown voltage of the main pn junction (5). Means are provided for transmitting light into the semiconductor body via the given surface to enable photogeneration of charge carriers in the vicinity of the photosensitive pn junction(s) (17). The further region(s) may include one or more annular floating regions (6") spaced apart from the main pn junction(s) and each other.
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Coe David J.
Slatter John A. G.
Whight Kenneth R.
Biren Steven R.
James Andrew J.
Ngo Ngan Van
U. S. Philips Corp.
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