Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Patent
1998-06-22
1999-06-15
Chaudhuri, Olik
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
438 45, 438495, H01L 21205, H01L 2122
Patent
active
059131071
ABSTRACT:
A pair of SiO.sub.2 stripe masks are formed on a p-InP substrate (31) with including a p-InP clad layer (32), an active layer (33) and an n-InP clad layer (34) is formed on the p-InP substrate (31) at the 1.5 .mu.m exposed area according to MOVPE selective growth process. Both sides of the optical waveguide are buried with pnpn current blocking structure according to the MOVPE selective growth, wherein a p-InP layer (36) and n-InP layer (37) are formed, then a surface of the n-InP layer (37) is inverted to p-type to form a p-InP inversion layer (38) according to Zn open tube diffusion process carried out in MOVPE system, thereby the interconnection between the n-InP layer (37) and the n-InP clad layer (34) is prevented, and then a p-InP layer (39) and n-InP layer (40) are formed. An n-InP layer (41) is formed thereon.
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Chaudhuri Olik
Mai Anh D.
NEC Corporation
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