Photoresponsive semiconductor device having a double layer anti-

Details Photoresponsive semiconductor device having a double layer anti- Photoresponsive semiconductor device having a double layer anti-

1984-02-24

1985-07-09

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

29572, 136249, 136258, 357 30, 357 52, 427 74, H01L 3104, H01L 3118

Patent

active

045284180

ABSTRACT:
Disclosed is an improved dual layer anti-reflective coating for use in a photoresponsive semiconductor device, and a device incorporating the coating. The coating has a uniformly low parasitic absorbance in the range of about 475 to 600 nanometers. The dual layer has an incident light layer and an intermediate layer. The intermediate layer is formed of a silicon alloy material having at least one band gap widening element incorporated therein. The index of refraction of the intermediate layer has an index of refraction intermediate the indexes of the incident light layer and the underlying photoresponsive semiconductor device.

REFERENCES:
patent: 4388482 (1983-06-01), Hamakawa et al.
patent: 4389534 (1983-06-01), Winterling
patent: 4441113 (1984-04-01), Madan
R. Meaudre & J. Tardy; "Wide Optical Gap, Undoped, Photoconductive a--Si.sub.x H.sub.1-x :H Prepared by D. C. Sputtering"; Solid State Comms.; 48, 2, pp. 117-119 (1983).
H. Watanabe, et al; "Electrical Properties of Glow Discharge Amorphous SiN.sub.x H Thin Films"; Thin Solid Films, 106 (1983): pp. 263-274.
S. M. Pietruszko, et al; "Effect of Nitrogen On Glow Discharge Amorphous Films"; Philo. Mag. B (1981), vol. 43, No. 2, pp. 357-363.

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