Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure
Patent
1991-10-15
1993-08-31
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Light responsive structure
257188, 257442, 257461, 257466, H01L 2714, H01L 3100
Patent
active
052411966
ABSTRACT:
A mercury-cadmium-telluride (HgCdTe) photoresponsive layer (14) having the composition Hg.sub.1-x Cd.sub.x Te is formed on a substrate (12) such that x increases from the surface (14a) of the photoresponsive layer (14) toward the substrate (12). This causes the bandgap in the photoresponsive layer (14) to increase from the surface (14a) toward the substrate (12), thereby urging minority carriers which are photogenerated in the photoresponsive layer (14) to move toward and be trapped at the surface (14a). Laterally spaced first and second ohmic contacts (16,18) are electrically connected to the photoresponsive layer (14) at a predetermined distance (z.sub.c) below the surface (14a) such that the photogenerated minority carriers trapped at the surface (14a) are urged away from the contacts (16,18) by the increasing bandgap. An electrically floating photoresponsive layer (24) of opposite conductivity type may be formed between the substrate (12) and the photoresponsive layer (14) to form a Heterojunction Interface Trap.
REFERENCES:
patent: 4117504 (1978-09-01), Maslov et al.
patent: 4411732 (1983-10-01), Wotherspoon
patent: 4914495 (1990-04-01), Norton et al.
patent: 4999694 (1991-03-01), Austin et al.
T. Tung et al., "Liquid-Phase Epitaxy of Hg.sub.1-x Cd.sub.x Te from Hg Solution: A Route to Infrared Detector Structures", in Materials for Infrared Detectors and Sources, Mater. Res. Soc. Symp. Proc., vol. 90, pp. 321 ff., 1987.
Chia Joan K.
Huang Chao
Kosai Kenneth
Denson-Low W. K.
Hille Rolf
Santa Barbara Research Center
Schubert W. C.
Tran Minhloan
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