Photoresists with particles less than one micron

Details Photoresists with particles less than one micron Photoresists with particles less than one micron

1976-11-24

1979-01-02

Kimlin, Edward C.

Gas separation: apparatus

Electric field separation apparatus

Electrode cleaner, apparatus part flusher, discharger, or...

96 362, 96 351, 96115R, 156659, 156662, G03C 500, G03C 168

Patent

active

041325508

ABSTRACT:
A germanium mesa transistor is fabricated having an epitaxially grown base region and an aluminum alloy emitter in the epitaxially grown layer spaced from the collector junction, and having a gold-comprising base electrode surrounding the emitter and closely spaced therefrom. The gold contact is formed by photolithographic and selective etching techniques, followed by the formation of the aluminum emitter, which is also formed by photolithographic and selective etching techniques. A key step is the selective removal of the aluminum from the germanium wafer without disturbing the gold contact.

REFERENCES:
patent: 3079254 (1963-02-01), Rowe
"Millipore Microfiltration Procedure", MFP-1, 1963.
Watts, "Ultracleaning Photoresists", 1966.
"An Introduction to Photofabrication Using Kodak Photosensitive Resists", 1967, pp. 19-20.

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