Photoresist with adjustable polarized light reaction and...

Details Photoresist with adjustable polarized light reaction and... Photoresist with adjustable polarized light reaction and...

2007-01-02

2007-01-02

Walke, Amanda (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Plural exposure steps

C430S270100, C430S311000, C430S325000

Reexamination Certificate

active

10892751

ABSTRACT:
A photoresist with adjustable polarized light response and a photolithography process using the photoresist. The photoresist and the photolithography process are suitable for use in an exposure optical system with a high numerical aperture. The photoresist includes a photosensitive polymer that can absorb the exposure light source to generate an optical reaction. The photosensitive polymer can also be oriented along a direction of an electric field or a magnetic field. The response for the photosensitive upon a polarized light is determined by an angle between the predetermined direction and the polarized light. In addition, the photolithography process adjusts the orientation of the photosensitive polymer, so that the P-polarized light has a weaker response than that of the S-polarized light to compensate for the larger transmission coefficient of the P-polarized light with a high numerical aperture, so as to prevent the photoresist pattern deformation.

REFERENCES:
patent: 5399460 (1995-03-01), Aldrich et al.
patent: 5789141 (1998-08-01), Usujima
patent: 5917980 (1999-06-01), Yoshimura et al.
patent: 6115514 (2000-09-01), Ando et al.
patent: 6277539 (2001-08-01), Bajikar et al.

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