Photoresist trimming process

Details Photoresist trimming process Photoresist trimming process

2011-06-07

2011-06-07

Kebede, Brook (Department: 2894)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21259

Reexamination Certificate

active

07955988

ABSTRACT:
A photoresist trimming gas compound is provided which will selectively remove a resist foot or scum from the lower portions of sidewalls of a photoresist. Additionally, the trimmer compound hardens or toughens an upper surface of the photoresist thereby strengthening the photoresist. The trimmer compound includes O2and at least one other gaseous oxide and is typically utilized in a dry etching process after a trench has been formed in a photoresist. The other oxide gases, in addition to the O2may include CO2, SO2and NO2.

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Office Action in U.S. Appl. No. 11/869,373, dated Sep. 14, 2009.
Office Action dated Mar. 18, 2010 in U.S. Appl. No. 11/869,373.

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