Photoresist stripping composition and method

Details Photoresist stripping composition and method Photoresist stripping composition and method

1981-11-23

1983-07-26

Kittle, John E.

Compositions

Compositions containing a single chemical reactant or plural...

Organic reactant

252146, 252148, 252151, 252162, 252170, 252171, 252549, 252556, 252558, 252559, 134 3, 134 38, 134 40, 134 41, 134 42, 568763, 430329, 430331, C11D 726, C11D 734

Patent

active

043953484

ABSTRACT:
An organic photoresist stripping composition especially for use with silicon wafers having an insulating layer and metallization on the wafers contains an organic sulfonic acid and 1,2 dihydroxybenzene. The composition also preferably includes a polar or nonpolar, organic solvent. This composition will remove both positive and negative photoresist from wafers without attack on either aluminum metallization or silicon dioxide insulation layers when used to contact the photoresist on the wafers.

REFERENCES:
patent: 3530186 (1970-09-01), Greco
patent: 3582401 (1971-06-01), Berilla et al.
patent: 4165294 (1979-08-01), Vander Mey
patent: 4215005 (1980-07-01), Vander Mey
patent: 4221674 (1980-09-01), Vander Mey
patent: 4242218 (1980-12-01), Vander Mey

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