Photoresist strip method

Semiconductor device manufacturing: process – Including control responsive to sensed condition – Interconnecting plural devices on semiconductor substrate

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438622, 437228, H01L 21465

Patent

active

057926727

ABSTRACT:
An improved method for removing a photoresist mask from an etched aluminum pattern after etching the pattern in a chlorine containing plasma has been created. The method is a two step process, in which a first stripping step is in a plasma containing O.sub.2 and H.sub.2 O and a second stripping step is in a plasma containing O.sub.2.

REFERENCES:
patent: 4732658 (1988-03-01), Lee

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