Photoresist residue remover composition and semiconductor...

Cleaning compositions for solid surfaces – auxiliary compositions – Cleaning compositions or processes of preparing – For cleaning a specific substrate or removing a specific...

Reexamination Certificate

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C510S176000, C134S001300, C252S079100, C252S079400

Reexamination Certificate

active

07816313

ABSTRACT:
A photoresist residue remover composition is provided that removes a photoresist residue formed by a resist ashing treatment after dry etching in a step of forming, on a substrate surface, wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the composition including one or two or more types of inorganic acid and one or two or more types of inorganic fluorine compound. There is also provided a process for producing a semiconductor circuit element wherein, in a step of forming wiring of any metal of aluminum, copper, tungsten, and an alloy having any of these metals as a main component, the photoresist residue remover composition is used for removing a photoresist residue formed by a resist ashing treatment after dry etching.

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