Photoresist removal process using heated solvent vapor

Details Photoresist removal process using heated solvent vapor Photoresist removal process using heated solvent vapor

1996-02-13

1998-07-28

Tung, T.

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

216 83, 216 99, 216108, H01L 2102

Patent

active

057858756

ABSTRACT:
Disclosed is a method for the removal of a layer of photoresist material from a surface of a film located on an in-process integrated circuit wafer subsequent to etching the film through the photoresist material layer. The method disclosed herein comprises first, applying a layer of the photoresist material layer over the film, then patterning the photoresist material, etching the film, and finally, removing the photoresist material. The etch is preferably a wet etch conducted in a closed reaction chamber. The photoresist material removal can be conducted within the same closed reaction chamber as that in which the etch was conducted. Photoresist material removal is achieved by exposing the photoresist material to heated solvent vapors. One particularly advantageous vapor solvent comprises isopropyl alcohol. Subsequent to the photoresist material removal, the film is preferably subjected to cleaning, rinsing, and drying methods, all of which can be conducted within the same closed reaction chamber.

REFERENCES:
patent: 4780176 (1988-10-01), Sudarshan et al.
patent: 4917123 (1990-04-01), McConnell et al.
patent: 4975147 (1990-12-01), Tahara et al.
patent: 5262001 (1993-11-01), Takehara
patent: 5380397 (1995-01-01), Fukuyama et al.
patent: 5468686 (1995-11-01), Kawmoto
patent: 5626775 (1997-05-01), Roberts et al.

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