Photoresist masking in manufacture of semiconductor device

Details Photoresist masking in manufacture of semiconductor device Photoresist masking in manufacture of semiconductor device

1979-10-11

1981-03-24

Ozaki, G.

Metal treatment

Compositions

Heat treating

148187, H01L 2126

Patent

active

042578264

ABSTRACT:
A semiconductor integrated circuit such as an MOS random access memory or RAM is made by standard N-channel silicon gate manufacturing methods but using positive photoresist for successive masking steps by re-exposure of the photoresist. In making ion implants for threshold adjustment, the positive photoresist is deposited and exposed using a first mask which defines the channel areas of transistors which are to have one threshold voltage; upon developing, the channel areas will be bare so a first implant will penetrate only these channel areas. Then, without stripping the photoresist, another exposure using a second mask defines the channel areas of transistors which are to have another threshold voltage. After the photoresist is developed a second time, another implant will penetrate the channel areas defined by the second mask as well as the first.

REFERENCES:
patent: 3969744 (1976-07-01), Nicholas et al.
patent: 4021270 (1977-03-01), Hunt et al.
patent: 4045250 (1977-08-01), Dingwall
patent: 4046606 (1977-09-01), Lambert
patent: 4052229 (1977-10-01), Pashley
patent: 4055444 (1977-10-01), Rao
patent: 4078947 (1978-03-01), Johnson
patent: 4106954 (1978-08-01), de Brebisson et al.
patent: 4131983 (1979-01-01), Matzen
patent: 4154626 (1979-05-01), Joy et al.
patent: 4155778 (1979-05-01), Antipov

Affiliated with

Also associated with

Rating

Photoresist masking in manufacture of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photoresist masking in manufacture of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photoresist masking in manufacture of semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2407110