Photoresist compositions

Stock material or miscellaneous articles – Composite – Of epoxy ether

Reexamination Certificate

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Details

C428S421000, C428S522000, C428S698000, C430S272100, C430S280100

Reexamination Certificate

active

10377165

ABSTRACT:
New photoresists are provided that are suitable for short wavelength imaging, including sub-300 nm and sub-200 nm such as 193 nm and 157 nm. Photoresists of the invention contain a resin with photoacid-labile groups, one or more photoacid generator compounds, and an adhesion-promoting additive compound. Photoresists of the invention can exhibit significant adhesion to SiON and other inorganic surface layers.

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