Photoresist composition comprising an interpolymer of a silicon-

Radiation imagery chemistry: process – composition – or product th – Diazo reproduction – process – composition – or product – Composition or product which contains radiation sensitive...

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430165, 430166, 430167, 430197, 430270, 430271, 430272, 430312, 430313, 430323, G03C 160, G03C 1727

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active

047881275

ABSTRACT:
A photoresist composition comprises a photosensitive compound and an interpolymer of a silicon-containing monomer and an hydroxystyrene. The resist composition exhibits superior thermal stability and dissolution rate and good resistance to an oxygen plasma etch.

REFERENCES:
patent: 3869292 (1975-03-01), Peters
patent: 4481049 (1984-11-01), Reichmanis et al.
patent: 4521274 (1985-06-01), Reichmanis et al.
patent: 4551409 (1985-11-01), Gulla et al.
patent: 4624909 (1986-11-01), Saotome et al.
patent: 4678737 (1987-07-01), Schneller et al.
patent: 4689288 (1987-08-01), Buiguez et al.
Reichmanis et al., "Approaches to Resist for Two-Level RIE Pattern Transfer Applications," Solid State Technology, Aug. 1985, pp. 130-135.

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