Photoresist and polymer removal by UV laser aqueous oxidant

Details Photoresist and polymer removal by UV laser aqueous oxidant Photoresist and polymer removal by UV laser aqueous oxidant

1998-05-07

2000-01-04

Gulakowski, Randy

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

134 2, 134 3, B08B 700, B08B 704

Patent

active

060098880

ABSTRACT:
A method of stripping photoresist and polymer from a wafer after a dry etch of a nitrade or a polysilicon layer that immerses the wafer in a peroxydisulfate (S.sub.2 O.sub.8.sup.2-)/HCl wet bath and while the wafer is still immersed, irradiates the wafer with a UV laser. The method comprises: (a) forming an silicon nitride layer 24 and a photoresist pattern 28 over a semi conductor structure 10; (b) dry etching the silicon nitride layer 24 thus forming a polymer 30 over the photoresist pattern, and the silicon nitride layer, (c) Immersing the substrate, the photoresist pattern, the polymer 30 in a liquid bath 34 comprising (1) peroxydisulfate (S.sub.2 O.sub.8.sup.2-), (2) HCl, and (3) water; and irradiating the photoresist pattern 28 and polymer layer 30 with a UV laser thereby removing the photoresist 28 and polymer 30.

REFERENCES:
patent: 4718974 (1988-01-01), Minaee
patent: 5035918 (1991-07-01), Vyas
patent: 5114834 (1992-05-01), Nachshon
patent: 5381807 (1995-01-01), Lee
patent: 5630904 (1997-05-01), Aoyama et al.
Livshits et al, "Laser, Dry And Plasmaless Photoresist Removal", Solid State Technology, Jul. 1997, p. 197-202.

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