Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Electromagnetic or particle radiation
Reexamination Certificate
2008-07-15
2008-07-15
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Electromagnetic or particle radiation
C257S461000, C257S464000, C257S294000, C257S233000, C257SE27134
Reexamination Certificate
active
07400022
ABSTRACT:
A photoreceiver cell with separation of color components of light incident to its surface, formed in a silicon substrate of the conductivity of the first type with an ohmic contact and comprising: the first, second and third regions, which have mutual positioning and configuration, which provide formation of the first and the second channels for diffusion of the secondary charge carriers generated in the substrate regions located under the first and the second potential barriers to the first and the third p-n junctions respectively; in this case, the length of the channels does not exceed the diffusion length of the secondary charge carriers.A technical result of the present invention is an increase in spatial resolution of the projected image and its dynamic range.Another technical result of the present invention is a decrease in the photo-cell area.A photoreceiver cell with color separation may find broad application in multielement photoreceivers for video cameras and digital cameras.
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Gergel Victor Alexandrovitch
Lependin Andrey Vladimirovitch
Tishin Yuriy Ivanovitch
Vanushin Igor Valerievitch
Zimoglyad Vladimir Alexandrovitch
MacPherson Kwok & Chen & Heid LLP
Nguyen Cuong Q
Shenker Michael
Tran Tran Q
Unique IC's
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