Photopump-enhanced electroluminescent devices

Details Photopump-enhanced electroluminescent devices Photopump-enhanced electroluminescent devices

2005-12-06

2005-12-06

Williams, Joseph (Department: 2879)

Electric lamp and discharge devices

With luminescent solid or liquid material

Solid-state type

C313S501000, C313S507000

Reexamination Certificate

active

06972516

ABSTRACT:
An electroluminescent device in which the intensity of the light emission is enhanced by photopumping with radiation from a radiation source of a suitable photon energy. The photopumping radiation from the radiation source interacts with the wide band-gap semiconductor forming the electroluminescent device so as to, when the device is electrically biased to provide light emission, generate additional carriers that enhance the intensity of the light emission from a light-emitting element present in the wide band-gap semiconductor. A waveguide structure may be integrated into a substrate carrying the electroluminescent device for transferring the radiation from the radiation source to the electroluminescent device. Multiple electroluminescent devices may be arranged in pixels for forming a flat panel display in which certain of the devices are photopumped with radiation.

REFERENCES:
patent: 5432808 (1995-07-01), Hatano et al.
patent: 5548137 (1996-08-01), Fan et al.
patent: 5583351 (1996-12-01), Brown et al.
patent: 5585648 (1996-12-01), Tischler
patent: 5739554 (1998-04-01), Edmond et al.
patent: 5751021 (1998-05-01), Teraguchi
patent: 5898185 (1999-04-01), Bojarczuk et al.
patent: 5966393 (1999-10-01), Hide et al.
patent: 6069440 (2000-05-01), Shimizu et al.
patent: 6120909 (2000-09-01), Bojarczuk et al.
patent: 6160273 (2000-12-01), Fork et al.
patent: 6169359 (2001-01-01), Sun et al.
patent: 6255669 (2001-07-01), Birkhahn et al.
patent: 6258617 (2001-07-01), Nitta et al.
patent: 6605895 (2003-08-01), Hori et al.
patent: 6713954 (2004-03-01), Wakahara et al.
J. Heikenfeld, M. Garter, D.S. Lee, R. Birkhahn and A.J. Steckl,Red Light Emission by Photoluminescence and Electroluminescence from Eu-Doped GaN, Applied Physics Letters, vol. 75, No. 9, pp. 1189-1191 (Aug. 30, 1999).
D.S. Lee, J. Heikenfeld, R. Birkhahn, M. Garter, B.K. Lee and A.J. Steckl,Voltage-Controlled Yellow or Orange Emission from GaN Codoped with Er and Eu, Applied Physics Letters, vol. 76, No. 12, pp. 1525-1527 (Mar. 20, 2000).
A.J. Steckl, J. Heikenfeld, D.S. Lee, M. Garter,Multiple Color Capability from Rare Earth-Doped Gallium Nitride, Materials Science and Engineering B81 (2001), pp. 97-101.
D.S. Lee and A.J. Steckl,Lateral Color Integration on Rare-Earth-Doped GaN Electroluminescent Thin Films, Applied Physics Letters, vol. 80, No. 11, pp. 1888-1890 (Mar. 18, 2002).
Jason Heikenfeld and Andrew J. Steckl,Electroluminescent Devices Using a High-Temperature Stable GaN-Based Phosphor and Thick-Film Dielectric Layer, IEEE Transactions on Electron Devices, vol. 49, No. 4, pp. 557-563 (Apr. 2002).
D.S. Lee et al.,Optimum Er Concentration for In Situ Doped GaN Visible and Infrared Luminescence, Applied Physics Letters, vol. 79, No. 6, pp. 719-721 (Aug. 6, 2001).
D.S. Lee, J. Heikenfeld, A.J. Steckl,Growth-Temperature Dependence of Er-Doped GaN Luminescent Thin Films, Applied Physics Letters, vol. 80, No. 3, pp. 344-346 (Jan. 21, 2002).
D.S. Lee and A.J. Steckl,Ga Flux Dependence of Er-Doped GaN Luminescent Thin Films, Applied Physics Letters, vol. 80, No. 5, pp. 728-720 (Feb. 4, 2002).
E. Calleja et al.,Luminescence Properties and Defects in GaN Nanocolumns Grown by Molecular Beam Epitaxy, Physical Review B (PRB), vol. 62, No. 24, pp. 16826-16834 (Dec. 15, 2000).
A.J. Steckl and R. Birkhahn,Visible Emission from Er-Doped GaN Grown by Solid Source Molecular Beam Epitaxy, Applied Physics Letters, vol. 73, No. 12, pp. 1700-1702 (Sep. 21, 1998).
A.J. Steckl, M. Garter, D.S. Lee, J. Heikenfeld and R. Birkhahn,Blue Emission from Tm-Doped GaN Electroluminescent Devices, Applied Physics Letyters, vol. 75, No. 15, pp. 2184-2186 (Oct. 11, 1999).
D.S. Lee and A.J. Steckl,Room-Temperature Grown Rare-Earth-Doped GaN Luminescent Thin Films, Applied Physics Letters, vol. 79, No. 13, pp. 1962-1964 (Sep. 24, 2001).
A.J. Steckl and J.M. Zavada,Optoelectronic Properties and Applications of Rare-Earth-Doped GaN, MRS Bulletin, Sep. 1999, pp. 33-38.
R. Birkhahn and A.J. Steckl,Green Emission from Er-Doped GaN Grown by Molecular Beam Epitaxy on Si Substrates, Applied Physics Letters, vol. 73, No. 15, pp. 2143-2145 (Oct. 12, 1998).

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