Photonic integration scheme

Details Photonic integration scheme Photonic integration scheme

2011-04-05

2011-04-05

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257SE21002, C372S046010

Reexamination Certificate

active

07919349

ABSTRACT:
Provided is an apparatus and method for manufacture thereof. The apparatus includes a passive optical waveguide structure and a photodiode detector structure. The structures are located on a substrate, and the photodiode detector is laterally proximate to the semiconductor passive waveguide structure. The passive optical waveguide structure includes a first lateral portion of a semiconductor optical core layer on the substrate, a semiconductor upper optical cladding layer on the optical core layer, and a first lateral portion of a doped semiconductor layer on the upper optical cladding layer. The photodiode detector structure includes a second lateral portion of the semiconductor optical core layer, a semiconductor optical absorber layer on the optical core layer, and a second lateral portion of the doped semiconductor layer.

REFERENCES:
patent: 6222865 (2001-04-01), Stoltz et al.
patent: 6239422 (2001-05-01), Vang et al.
patent: 7164699 (2007-01-01), Braun et al.
patent: 2009/0074426 (2009-03-01), Doerr
patent: 2010/0054761 (2010-03-01), Chen et al.

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