Photonic digital-to-analog converter employing a plurality...

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – With light activation

Reexamination Certificate

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C257S195000, C257S107000, C257S192000, C257S183000, C438S007000, C438S048000

Reexamination Certificate

active

06995407

ABSTRACT:
A photonic digital-to-analog converter employing a plurality of heterojunction thyristor devices that are configured to convert a digital word encoded by a parallel digital optical signal (e.g., a plurality of synchronous optical bits) to an output analog electrical signal whose magnitude corresponds to the digital word. Each heterojunction thyristor device is configured to convert an optical bit in the digital word to a corresponding digital electrical signal. The voltage levels (e.g., magnitudes) of the ON state of the digital electrical signals produced by the heterojunction thyristor devices may be supplied by voltage divider networks coupled between the cathode terminal of the devices and ground potential or voltage reference sources coupled to the input terminals of the heterojunction thyristor devices. In this manner, electrical signals whose magnitude corresponds to contribution of each optical bit in the digital word are produced. These electrical signals are summed by a summing network to generate the output analog electrical signal corresponding to the digital word.

REFERENCES:
patent: 3919656 (1975-11-01), Sokal et al.
patent: 4424525 (1984-01-01), Mimura
patent: 4658403 (1987-04-01), Takiguchi et al.
patent: 4683484 (1987-07-01), Derkits, Jr.
patent: 4806997 (1989-02-01), Simmons et al.
patent: 4814774 (1989-03-01), Herczfeld
patent: 4827320 (1989-05-01), Morkoc et al.
patent: 4829272 (1989-05-01), Kameya
patent: 4899200 (1990-02-01), Shur et al.
patent: 4949350 (1990-08-01), Jewell et al.
patent: 5010374 (1991-04-01), Cooke et al.
patent: 5105248 (1992-04-01), Burke et al.
patent: 5202896 (1993-04-01), Taylor
patent: 5204871 (1993-04-01), Larkins
patent: 5337328 (1994-08-01), Lang et al.
patent: 5386128 (1995-01-01), Fossum et al.
patent: 5422501 (1995-06-01), Bayraktaroglu
patent: 5436759 (1995-07-01), Dijaili et al.
patent: 5698900 (1997-12-01), Bozada et al.
patent: 6031243 (2000-02-01), Taylor
patent: 6043519 (2000-03-01), Shealy et al.
patent: 2002/0067877 (2002-06-01), Braun et al.
patent: 2004/0079939 (2004-04-01), Taylor et al.
patent: 2004/0081216 (2004-04-01), Dehmubed et al.
patent: WP 02/071490 (2002-09-01), None
“Photodetectors for 1.3 um and 1.55 um wavelengths using SiGe undulating MQW's SOI substrates”; Dan-Xia Xu, Siegfried Janz, Hugues Lafontaine, Matthew R. T. Pearson; Institute for Microstructural Sciences, National Research Council, Ottawa, Canada; Jan., 1999.
10-Gb/s High-Speed Monolithically Integrated Photoreceiver Using InGaAs p-l-n PD and Planar Doped InA1ASs/InGaAs HEMT'sby Y. Akahori et al., IEEE Photonics Technology Letters, vol. 4, No. 7, Jul. 1992.
10-Gbit/s InP-Based High-Performance Monolithic Photoreceivers Consisting of p-i-n Photodiodes and HEMT'sby Kiyoto Takahata et al., IEICE Trans. Electron., vol. E83-C, No. 6, Jun. 2000.
10 Ghz Bandwidth Monolithic p-i-n Modulation-Doped Field Effect Transistor Photoreceiverby N.K. Dutta et al., Appl. Phys. Lett., vol. 63, No. 15, Oct. 11, 1993.
20 Gbits/s Long Wavelength Monolithic Integrated Photoreceiver Grown on GaAsby V. Hurm et al., Electronic Letters, vol. 33, No. 7, Mar. 27, 1997.
Heterojunction Field-Effect Transistor(HFET) by G.W. Taylor et al., Electronics Letters, vol. 22, No. 15, pp. 784-786, Jul. 17, 1986.
High Temperature Annealing of Modulation Doped GaAs/A1GaAs Heterostructures for FET Applicationsby H. Lee et al., 1983 IEEE/Cornell Conf. On High-Speed Semiconductor Devices & Ckts, Aug. 1983.
Monolithic Integrated Optoelectronic Circuitsby M. Berroth et al., 0-7803-2442-0-8/1995 IEEE, 1995.
Physical Layer Solution for Very Short Reach Applications Utilizing Parallel Opticsby Steve Ahart, Agilent Technologies, ONIDS 2002.
Parallel Optics: the Solution for High-Speed Interconnectsdownloaded from www.paralleloptics.org. Dec. 2000, updated Apr., May, Jul., Sep., Nov. 2001 and Jan., Apr. and Jul. 2002.
Submicrometre Gate Length Scaling of Inversion Channel Heterojuction Field Effect Transistorby P.A. Kiely et al., Electronics Letters, vol. 30, No. 6, Mar. 17, 1994.
Theoretical and Experimental Results for the Inversion Channel Heterostructure Field Effect Transistorby G.W. Taylor et al., IEE Proceedings-G, vol. 140, No. 6, Dec. 1993.

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