Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2004-08-04
2008-10-28
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S094000, C257S432000
Reexamination Certificate
active
07442964
ABSTRACT:
A semiconductor light emitting device includes a photonic crystal structure that is a lattice of holes in the semiconductor layers. The photonic crystal structure includes multiple lattices. In some embodiments, the device includes a first lattice formed on a first region of the semiconductor layers and a second lattice formed on a second region of the semiconductor layers. The parameters of the first lattice may be selected to maximize the total radiated power from the device. The parameters of the second lattice may be selected to maximize the light extraction into a 30° cone on a surface of the stack.
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Sigalas Mihail M.
Wierer Jr. Jonathan J.
Agilent Technologie,s Inc.
Leiterman Rachel V.
Patent Law Group LLP
Pham Long
Philips Lumileds Lighting Company LLC
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