Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...
Reexamination Certificate
2006-03-09
2008-10-28
Ho, Tu-Tu V (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With reflector, opaque mask, or optical element integral...
C257S101000, C257SE33005, C257SE33006
Reexamination Certificate
active
07442965
ABSTRACT:
A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.
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Epler John E.
Krames Michael R.
Wierer Jr. Jonathan J.
Ho Tu-Tu V
Leiterman Rachel V.
Patent Law Group LLP
Philips Lumileds Lighting Company LLC
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