Photonic crystal light emitting device

Details Photonic crystal light emitting device Photonic crystal light emitting device

2007-11-13

2007-11-13

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With heterojunction

C257S096000, C257S098000

Reexamination Certificate

active

11373639

ABSTRACT:
A photonic crystal structure is formed in an n-type layer of a III-nitride light emitting device. In some embodiments, the photonic crystal n-type layer is formed on a tunnel junction. The device includes a first layer of first conductivity type, a first layer of second conductivity type, and an active region separating the first layer of first conductivity type from the first layer of second conductivity type. The tunnel junction includes a second layer of first conductivity type and a second layer of second conductivity type and separates the first layer of first conductivity type from a third layer of first conductivity type. A photonic crystal structure is formed in the third layer of first conductivity type.

REFERENCES:
patent: 5338944 (1994-08-01), Edmond et al.
patent: 5371025 (1994-12-01), Sung
patent: 5779924 (1998-07-01), Krames et al.
patent: 5955749 (1999-09-01), Joannopoulos et al.
patent: 6071795 (2000-06-01), Cheung et al.
patent: 6091085 (2000-07-01), Lester
patent: 6156581 (2000-12-01), Vaudo et al.
patent: 6307218 (2001-10-01), Steigerwald et al.
patent: 6335548 (2002-01-01), Roberts et al.
patent: 6363096 (2002-03-01), Dodabalapur et al.
patent: 6526082 (2003-02-01), Corzine et al.
patent: 6534798 (2003-03-01), Scherer et al.
patent: 6559075 (2003-05-01), Kelly et al.
patent: 6704343 (2004-03-01), Deng et al.
patent: 6770353 (2004-08-01), Mardilovich et al.
patent: 6831302 (2004-12-01), Erchak et al.
patent: 6958494 (2005-10-01), Lin et al.
patent: 2002/0004307 (2002-01-01), Yamada
patent: 2002/0130311 (2002-09-01), Lieber et al.
patent: 2003/0016895 (2003-01-01), Holm et al.
patent: 2003/0089899 (2003-05-01), Lieber et al.
patent: 2003/0141507 (2003-07-01), Krames et al.
patent: 2003/0222263 (2003-12-01), Choi
patent: 2003/0235229 (2003-12-01), Deng et al.
patent: 2004/0016936 (2004-01-01), Tanaka et al.
patent: 2004/0109644 (2004-06-01), Assefa et al.
patent: 2004/0135155 (2004-07-01), Otsuka et al.
patent: 2004/0207320 (2004-10-01), Erchak
patent: 2004/0207323 (2004-10-01), Erchak et al.
patent: 2005/0035354 (2005-02-01), Lin et al.
patent: 2005/0040419 (2005-02-01), Erchak et al.
patent: 2005/0051787 (2005-03-01), Erchak et al.
patent: 2005/0087754 (2005-04-01), Erchak
patent: 2005/0087757 (2005-04-01), Erchak et al.
patent: 2005/0145877 (2005-07-01), Erchak
patent: 2005/0173714 (2005-08-01), Lee et al.
patent: 2005/0173717 (2005-08-01), Lee et al.
patent: 2005/0205884 (2005-09-01), Kim et al.
patent: 2007/0114546 (2007-05-01), Erchak et al.
patent: 0 874 405 (1998-10-01), None
patent: 1 071 143 (2001-01-01), None
patent: 1 385 215 (2004-01-01), None
patent: 07176788 (1995-07-01), None
patent: WO 03/023857 (2003-03-01), None
patent: WO 2004/004927 (2004-01-01), None
patent: WO 2004/032193 (2004-04-01), None
patent: WO 2004/034025 (2004-04-01), None
patent: WO 2004/038767 (2004-05-01), None
Oder, T.N., et al., “Ill-nitride ohotonics crystals,” Appl. Phys. Lett., vol. 83, No. 6, pp. 1231-32, Aug. 11, 2003.
Erchak, A.A., et al., “Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode,” Appl. Phys. Lett., vol. 78, No. 5, pp. 563-65, Jan. 29, 2001.
J.J. Wierer et al., “InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structures,” Applied Physics Letters, vol. 84, No. 19, May 10, 2004, pp. 3885-3887.
Lee et al., “Modified spontaneous emission from a two-dimensional photonic bandgap crystal slab,” J. Opt. Soc. Am. B, vol. 17, No. 8, Aug. 2000, pp. 1438-1442.
Boroditsky et al., “Surface recombiantion measurements on III-V candidate materials for nanostructure light-emitting diodes,” Journal of Applied Physics, vol. 87, No. 7, Apr. 1, 2000, pp. 3497-3504.
Boroditsky et al., “Light extraction from optically pumped light-emitting diode by thin-slab photonic crystals,” Applied Physics Letters, vol. 75, No. 8, Aug. 23, 1999, pp. 1036-1038.
Windisch et al., “Light-emitting diodes with 31% external quantum efficiency by outcoupling of lateral waveguide modes,” Applied Physics Letters, vol. 74, No. 16, Apr. 19, 1999, pp. 2256-2258.
Xu et al., “Finite-difference time-domain calculation of spontaneous emission lifetime in a microcavity,” J. Opt. Soc. Am. B, vol. 16, No. 3, Mar. 1999, pp. 465-474.
Hwang et al., “Spontaneous emission rate of an electric dipole in a general microcavity,” Physical Review B, vol. 60, No. 7, Aug. 15, 1999, pp. 4688-4695.
Fan et al., “High Extraction Efficiency of Spontaneous Emission from Slabs of Photonic Crystals,” Physical Review Letters, vol. 78, No. 17, Apr. 28, 1997, pp. 3294-3297.
Vuckovic et al., “Surface Plasmon Enhanced Light Emitting Diode,” Journal of Quantum Electronics, vol. 36, 2000, pp. 1-13.
Tredicucci et al., “Single-mode surface-plasmon laser,” Applied Physics Letters, vol. 76, No. 16, Apr. 17, 2000, pp. 2164-2166.
Imada et al., “Coherent two-dimensional lasing action in surface-emitting laser with triangular-lattice photonic crystal structure,” Applied Physics Letters, vol. 75, No. 3, Jul. 19, 1999, pp. 316-318.
Pottage et al., “Vertical-cavity surface-emitting resonances in photonic crystal films,” J. Opt. Soc. Am. A, vol. 18, No. 2, Feb. 2001, pp. 442-447.
Tiwari, S., “Compound Semiconductor Device Physics,” Academic Press, Inc., San Diego, CA, 1992, pp. 182-186.
G.B. Stringfellow and M. George Crawford, eds., “High Brightness Light Emitting Diodes,” Academic Press, Inc., 1997, Chapter5, “AlGalnP Light-Emitting Diodes,” by F.A. Kish and R.M. Fletcher, pp. 149-170.
P.A. Kohl, “Photoelectrochemical etching of semiconductors”, IBM J. Res. Develop., vol. 42, No. 5, Sep. 5, 1998, pp. 629-637.
Chen-Fu Chu et al., “Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off”, Jpn. J. Appl. Phys., vol. 42 (2003), Part 2, No. 2B, Feb. 15, 2003, pp. L147-L150.
W.S. Wong et al., “InxGa1-xN light emitting diodes on Si substrates fabricated by Pd-In metal bonding and laser lift-off”, Applied Physics Letters, vol. 77, No. 18, Oct. 30, 2000, pp. 2822-2824.
H. Benisty et al., “Impact of Planar Microcavity Effects on Light Extraction—Part I: Basic Concepts and Analytical Trends”, IEEE Journal of Quantum Electronics, vol. 34, No. 9, Sep. 1998, pp. 1612-1631.
T. Fujii et al., “Increase in the extraction efficiency of GaN-based light emitting diodes via surface roughening”, Applied Physics Letters, vol. 84, No. 6, Feb. 9, 2004, pp. 855-857.
Y.-K. Song et al., “Resonant-cavity InGaN quantum-well blue light-emitting diodes”, Applied Physics Letters, vol. 77, No. 12, Sep. 18, 2000, pp. 1744-1746.
J. Ristic et al., “Characterization of GaN quantum discs embedded in AlxGa1-xN nanocolumns grown by molecular beam epitaxy,” Physical Review B68, (2003), The American Physical Society, pp. 125305-1 to 125305-5.
J.Noborisaka et al., “Catalyst-free growth of GaAs nanowires by selective-area metalorganic vapor-phase epitaxy,” Applied Physics Letters 86, (2005), American Institute of Physics, pp. 213102-1 to 213103-3.
T. Hamano et al. “New Technique for Fabrication of Two-Dimensional Photonic Bandgap Crystals by Selective Epitaxy,” Jpn. J. Appl. Phys. vol. 36 (1997), pp. L286 to L288.
S. Haffouz et al., “Effect of Magnesium and Silicon on the lateral overgrowth of GaN patterned substrates by Metal Organic Vapor Phase Epitaxy,” MRS Internet J. Nitride Semicond. Res. 3, 8 (1998), 1998-1999 The Materials Research Society, pp. 1 to 6.
G. Kipshidze et al., “Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition,” Applied Physics Letters 86, (2005) American Institute of Physics, pp. 033104-1 to 033104-3.
Kwa-Mok Kim et al., “Growth and characterization of single-crystal GaN nanorods by hydride vap

Affiliated with

Also associated with

Rating

Photonic crystal light emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photonic crystal light emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photonic crystal light emitting device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3889772