Photonic band gap materials and method of preparation thereof

Details Photonic band gap materials and method of preparation thereof Photonic band gap materials and method of preparation thereof

1992-12-04

1995-01-31

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes joining independent crystals

437126, 437127, 437129, 372 43, H01L 2120

Patent

active

053851145

ABSTRACT:
The invention concerns materials which exhibit photonic band gaps in the near infrared and visible regions of the optical spectrum and methods of preparation of such materials.
The materials manufactured according to the invention are particularly suitable for use in the optical analog to semiconductor behavior, in which a photonic band gap material, or a plurality of such materials acting in concert, can be made to interact with and control light wave propagation in a manner analogous to the way that semiconductor materials can be made to interact with and control the flow of electrically charged particles, i.e., electricity, in both analog and digital applications.
According to the invention it is possible to fabricate a photonic band gap material by impregnating the pores or voids contained within the volume of a specially prepared reticulated mesh, which may be made of a material with a high melting temperature such as a metal, with liquid material which melts at a temperature lower than the melting temperature of the reticulated mesh and which solidifies upon cooling. The reticulated mesh is then dissolved by simple chemical action in a liquid bath, leaving behind a solid reticulated structure composed of the solidified liquid material. In particular, the liquid material may be caused to solidify into an ordered solid such as a single crystal by the imposition of either or both a thermal gradient or a seed single crystal of the same or a closely related material.

REFERENCES:
patent: 3826625 (1974-07-01), Bailey
patent: 4153813 (1979-05-01), Blieden et al.
patent: 4168998 (1979-09-01), Hasegawa et al.
patent: 4184171 (1980-01-01), Panish
patent: 4902656 (1990-02-01), Erkens
patent: 5187461 (1993-02-01), Brommer et al.
patent: 5204284 (1993-04-01), Kuo et al.
patent: 5212394 (1993-05-01), Iwasaki et al.
"Materials for Visible LED"; Sze; Physics of Semiconductor Devices; 2nd ed., (1981) p. 690.

Affiliated with

Also associated with

Rating

Photonic band gap materials and method of preparation thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photonic band gap materials and method of preparation thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photonic band gap materials and method of preparation thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1097346