Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-11-07
2006-11-07
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257S098000
Reexamination Certificate
active
07132676
ABSTRACT:
A photon source comprising a quantum dot comprising a confined conduction band energy level capable of being populated with at least one carrier and a confined valence band energy level capable of being populated by at least one carrier is provided, the source further comprises supply means for intermittently supplying at least one carrier to the energy levels to create an exciton in the quantum dot, wherein the supply means are configured to regulate the supply of carriers such that as the exciton decays either a single photon or a plurality of single photons each having different distinct energies are emitted during a predetermined time interval. The source is configured to be able to enhance the production of a desired type of exciton and can also be configured to exploit the use of higher order excitons such as biexcitons.
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Shields Andrew James
Stevenson Richard Mark
Kabushiki Kaisha Toshiba
Nelms David
Nguyen Thinh T
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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