Photon induced cleaning of a reaction chamber

Details Photon induced cleaning of a reaction chamber Photon induced cleaning of a reaction chamber

2008-06-27

2010-11-02

Barr, Michael (Department: 1711)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C134S001200, C438S905000, C416S067000

Reexamination Certificate

active

07824499

ABSTRACT:
The present invention provides a method for in-situ cleaning of walls of a reaction chamber, e.g. reactive ion etching chamber, to remove contamination, e.g. copper comprising contamination from the walls. The method comprises converting the contamination, e.g. copper comprising contamination into a halide compound, e.g. copper halide compound and exposing the halide compound, e.g. copper halide compound to a photon comprising ambient, thereby initiating formation of volatile halide products, e.g. volatile copper halide products. The method furthermore comprises removing the volatile halide products, e.g. volatile copper halide products from the reaction chamber to avoid saturation of the volatile halide products, e.g. volatile copper halide products in the reaction chamber in order to avoid re-deposition of the volatile halide products, e.g. volatile copper halide products to the walls of the reaction chamber.

REFERENCES:
patent: 5356478 (1994-10-01), Chen et al.
patent: 6569775 (2003-05-01), Loewenhardt et al.
patent: 2006/0219267 (2006-10-01), Bailey et al.
patent: 1 338 674 (2003-08-01), None
Lee, Sangheon. Hydrogen bromide plasma-copper reaction in a new copper etching process. Thin Solid Films 457 (2004) 326-332.

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