Scanning-probe techniques or apparatus; applications of scanning – Particular type of scanning probe microscopy or microscope;... – Scanning tunnelling microscopy or apparatus therefor – e.g.,...
Reexamination Certificate
2011-08-23
2011-08-23
Vanore, David A (Department: 2881)
Scanning-probe techniques or apparatus; applications of scanning
Particular type of scanning probe microscopy or microscope;...
Scanning tunnelling microscopy or apparatus therefor, e.g.,...
C850S001000, C850S003000, C850S006000
Reexamination Certificate
active
08006315
ABSTRACT:
The present invention relates to an indirect-gap semiconductor substrate, the gap being greater than that of silicon and preferably greater than 1.5 eV, to its use for imaging a specimen by photon-emission scanning tunnel microscopy, and to a photon-emission scanning tunnel imaging method using such an indirect-gap semiconductor substrate. Advantageously, the indirect-gap semiconductor substrate is made of silicon carbide. The present invention also relates to devices for implementing the imaging method according to the invention.
REFERENCES:
patent: 5559330 (1996-09-01), Murashita
patent: 1 014 456 (2000-06-01), None
patent: 2 704 349 (1994-10-01), None
Horn J et al.: “High resolution surface characterization using STM light emission techniques”—Materials Science Forum Switzerland, vol. 185-188, 1995, pp. 145-153, XP0080156159, ISSN: 0255-5476.
Samuelson et al.: “Tunnel-induced photon emission in semiconductors using a, STM”, Physica Scripta T, Royal Swedish Academy of Science, Stockholm, SE, vol. T42-1992, pp. 149-152, XP008049441, ISSN: 0281-1847.
Evoy et al.: “Low-temperature scanning tunneling microscope-induced iluminescence of an InGaN/GaN multiquantum well”—Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, US, vol. 74, No. 10, Mar. 8, 1999, pp. 1457-1459, XP012022170, ISSN: 0003-6951.
Doege et al.: “Scanning tunneling microscopy, spectroscopy and tunneling-induced light emission on donor-doped BaTi03”—Surface Science, North-Holland Publish. Co. Amsterdam, vol. 566-568, Sep. 20, 2004, pp. 1211-1216, XP 004562240, ISSN: 0039-6028.
Rossow et al.: “Reflectance difference spectroscopy spectra of clean (3x2), (2x1), and c(2x2) 3C-SiC(001) surfaces: New evidence for surface state contributions to optical anisotropy spectra”—Journal of Vacuum Science & technology B: Microelectronics processing and Phenomena, American Vacuum Society; New-York, NY, US, vol. 16, No. 4, Jul. 1998, pp. 2355-2357, XP012007020, ISSN: 0734-211X.
Soukiassian P: “Cubic silicon carbide surface reconstructions and Si(C) nanostructures at the atomic scale”—Materials Science and Engineering, B. Elsevier Sequoia, Lausanne, CH—vol. 96, No. 2, Nov. 1, 2002, pp. 115-131, XP004387678, ISSN: 0921-5107.
Berndt et al.: “Atomic Resolution in Photon Emission Induced by a Scanning Tunneling Microscope”—Physical Review Letters, vol. 74, No. 1, Jan. 2, 1995, pp. 102-105.
Sakurai et al.: “Optical Selection Rules in Light Emission from the Scanning Tunneling Microscope”—Physical Review Letters, vol. 93, No. 4, Jul. 23, 2004, The American Physical Society—046102.
Charra Fabrice
Silly Matthieu
Soukiassian Patrick
Commissariat a l''Energie Atomique
McKenna Long & Aldridge LLP
Universite Paris SUD (Paris II)
Vanore David A
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