Photon detector system

Details Photon detector system Photon detector system

1980-03-28

1981-12-01

Smith, Alfred F.

Radiant energy

Invisible radiant energy responsive electric signalling

Semiconductor system

G01T 122

Patent

active

043038611

ABSTRACT:
A photon detector includes a semiconductor device, such as a Schottky barrier diode, which has an avalanche breakdown characteristic. The diode is cooled to cryogenic temperatures to eliminate thermally generated charge carriers from the device. The diode is then biased to a voltage level exceeding the avalanche breakdown threshold level such that, upon receipt of a photon, avalanche breakdown occurs. This breakdown is detected by appropriate circuitry which thereafter reduces the diode bias potential to a level below the avalanche breakdown threshold level to terminate the avalanche condition. Subsequently, the bias potential is reapplied to the diode in preparation for detection of a subsequently received photon.

REFERENCES:
patent: 3757123 (1973-09-01), Archer et al.
patent: 3864722 (1975-02-01), Carnes
patent: 4258375 (1981-03-01), Hsieh et al.

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