Photon-based memory device and method thereof

Static information storage and retrieval – Interconnection arrangements – Optical

Reexamination Certificate

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C365S106000, C365S112000, C365S215000

Reexamination Certificate

active

07626842

ABSTRACT:
A memory device includes a bit cell including an adjustable transmittance component having a first side and a second side. The adjustable transmittance component has an adjustable transmittance state representative of a bit value of the bit cell. The memory device further includes a photon detector optically coupled to a second side of the adjustable transmittance component. A technique related to the memory device includes determining a transmittance state of the adjustable transmittance component and providing a bit value for the bit cell based on the transmittance state. Another technique related to the memory device includes determining a bit value to be stored at the bit cell and configuring the adjustable transmittance component to have a transmittance state corresponding to the bit value.

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