Photon-based memory device

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Having diverse electrical device

Reexamination Certificate

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Details

C257SE21147, C257SE21287, C438S029000, C438S059000, C438S069000, C977S814000, C977S943000, C977S950000

Reexamination Certificate

active

07727786

ABSTRACT:
An optical memory cell having a material layer associated with a pixel capable of emitting and receiving light. The material layer has phosphorescent material formed therein for storing data as light received from and emitted to the pixel.

REFERENCES:
patent: 4449206 (1984-05-01), Tokitsu et al.
patent: 4789965 (1988-12-01), Michl et al.
patent: 4855950 (1989-08-01), Takada
patent: 4864536 (1989-09-01), Lindmayer
patent: 4900691 (1990-02-01), Jun
patent: 5124944 (1992-06-01), Suzuki et al.
patent: 5253198 (1993-10-01), Birge et al.
patent: 5268862 (1993-12-01), Rentzepis
patent: 5321780 (1994-06-01), Edelman
patent: 5325324 (1994-06-01), Rentzepis et al.
patent: 5331659 (1994-07-01), Ohata et al.
patent: 5585640 (1996-12-01), Huston et al.
patent: 5777318 (1998-07-01), Krishnamoorthy et al.
patent: 5835984 (1998-11-01), Katz
patent: 6005791 (1999-12-01), Gudesen et al.
patent: 6045888 (2000-04-01), Chen et al.
patent: 6172926 (2001-01-01), Drayer
patent: 6267911 (2001-07-01), Yen et al.
patent: 6432610 (2002-08-01), Rentzepis et al.
patent: 6437329 (2002-08-01), Yedur et al.
patent: 6483735 (2002-11-01), Rentzepis
patent: 6608774 (2003-08-01), Rentzepis
patent: 6733946 (2004-05-01), Kumacheva et al.
patent: 2002/0041264 (2002-04-01), Quanrud
patent: 2003/0073031 (2003-04-01), Rentzepis et al.
patent: 2003/0230629 (2003-12-01), Bourianoff et al.
patent: 2004/0057314 (2004-03-01), Pavlichek
patent: 2798236 (2001-03-01), None
patent: 1126419 (1966-12-01), None
patent: 2031399 (1990-02-01), None
patent: WO 2004/023192 (2004-03-01), None
Milster T.D.; Y. Zhang; C.D. Pinto; E.P. Walker “A Voumetric Memory Device Based on Photo-Chromic Compounds” Optical Science Center, University of Arizona, Tucson.
Kann J.L.; B.W. Canfiled; A.A. Jamberdino, B.J. Clarke, E. Daniszewski; G Sunada “Optical Mass Storage and Retrieval at Rome Laboratory”.
Chi C.J.; A.J. Steckl “Digital Thin-film Color Optical Memory” Applied Physics Letters, vol. 78, No. 2; Jan. 8, 2001.
Tang J.; B. Seshadri; K.N. Naughton; B.K. Lee, R.C. J. Chi; A.J. Steckl “CMOS-Based Photoreceiver Arrays for Page-Oriented Optical Storage Access” IEEE Photonics Tech. Letters, vol. 12, No. 9, Sep. 2000.
Liao N.; M. Gong; D. XU; G. QL; K. Zhang “Single-beam two photon three dimensional optical storage in a pyrryl-substituted fulgide photochromic material” Chinese Sc. Bulletin; vol. 46, No. 22.; Nov. 2001.
Burr G.W., J. Ashley; H. Coufal; R. Grygier, J. Hoffnagle, C.M. Jefferson; B. Marcus “Modulation coding for pixel matched holographic data Storage” Optic Letters vol. 22, No. 9; May 1997.
Chao T.; Zhou H.; Reyes G. “Compact Holographic Data Storage System” NASA article.
Goswani D. “Optical Computing: Optical Components and Storage Systems” Resonance Jun. 2003.
Manykin E.A. “Modern Possibilities of Coherent Photon-Echo-Type Processes for a Quantum Optical Computer” Laser Physics, vol. 12, No. 4, 2002, pp. 158-163.
Quang T.; M. Woldeyohannes; S. John “Coherent Control of Spontaneous Emission near a Photonic Band Edge: A Single-Atom Optical Memory Device” Physical Review Letters; vol. 79, No. 26, Dec. 1997.
Krishnamoorthy. A.V.; T.K. Woodward; K.W. Goossen, J.A. Walker, S.P. Hui, B. Tseng; J.E. Cunningham, W.Y. Jan, F.E. Kiamilev, D.A. Miller “ Dual Function Detector-Modulator Smart-Pixel Module” Applied Optics; vol. 36; No. 20; Jul. 10, 1997.
Bisi 0.; S. Ossicini; L. Pavesi “Porous Silicon: A Quantum Sponge Structure for Silicon Based Optoelectronics” Surface Science Reports 38 (2000) 1-126.
Wong H. “Recent Developments in Silicon Optoelectronic Devices” Microelectronics Reliability 42 (2002) 317-326.
Quellette, Jennifer, “Smart Pixels Wed Optics and Electronics,” The Industrial Physicist, Jun. 1999, 10-13, American Institute of Physics.
Wang et al., “Highly Efficient Polymer Light-Emitting Devices Using a New Phosphorescent Material,” 2003, Chin. Phys. Lett., vol. 20 No. 7, pp. 1141-1143.

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