Photon amplification for image sensors

Details Photon amplification for image sensors Photon amplification for image sensors

2006-02-22

2008-09-16

Prenty, Mark (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S070000

Reexamination Certificate

active

07425461

ABSTRACT:
A pixel cell having a substrate, photo-conversion device, and at least one dielectric layer over the photo-conversion device. The at least one dielectric layer includes one or more rare earth elements for amplifying the number of photons capable of being converted to charge by the photo-conversion device.

REFERENCES:
patent: 6624925 (2003-09-01), Hasson et al.
patent: 7145189 (2006-12-01), Mouli
patent: 2003/0063204 (2003-04-01), Suda
Chen, B. R. et al.—“Optoelectronic property of PN junction on erbium-doped silicon using thermal diffusion method,” Solid State Electronics 47 (2003) pp. 2127-2130.
Tang, Y.S. et al.—“Characteristics of rare-earth element erbium implanted in silicon,” Appl. Phys. Lett. 55 (5), Jul. 31, 1989, pp. 432-433.

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