Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2006-12-05
2006-12-05
Prenty, Mark V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S227000, C257S439000, C257S632000
Reexamination Certificate
active
07145189
ABSTRACT:
A pixel cell having a substrate, photo-conversion device, and at least one dielectric layer over the photo-conversion device. The at least one dielectric layer includes one or more rare earth elements for amplifying the number of photons capable of being converted to charge by the photo-conversion device.
REFERENCES:
patent: 6624925 (2003-09-01), Hasson et al.
patent: 2003/0063204 (2003-04-01), Suda
patent: 2006/0033126 (2006-02-01), Mouli
Chen, B. R. et al.—“Optoelectronic property of PN junction on erbium-doped silicon using thermal diffusion method,” Solid State Electronics 47 (2003) pp. 2127-2130.
Tang, Y.S. et al.—“Characteristics of rare-earth element erbium implanted in silicon,” Appl. Phys. Lett. 55 (5), Jul. 31, 1989, pp. 432-433.
Dickstein & Shapiro LLP
Micro)n Technology, Inc.
Prenty Mark V.
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