Photomask with alignment marks for the current layer

Details Photomask with alignment marks for the current layer Photomask with alignment marks for the current layer

2006-09-21

2008-08-19

Young, Christopher G (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S022000

Reexamination Certificate

active

07413834

ABSTRACT:
A photomask with alignment marks for the current layer is provided with four edges. The photomask includes main patterns, an inter-scribe lane pattern sited between the main patterns, an extra-scribe lane pattern only sited on the three edges of the photomask, a first set of alignment marks for the current layer on opposite edges having the extra-scribe lane patterns. The photomask further includes a second set of alignment marks for the current layer on opposite edges in which only one has the extra-scribe lane pattern, and they are placed on opposite locations in the inter-scribe lane pattern and the extra-scribe lane pattern, respectively. Moreover, each one of the second set of alignment marks for the current layer include multiple parallel patterns and at least one vertical pattern sited on at least one end of the parallel patterns which are parallel to an extended direction of the opposite edges.

REFERENCES:
patent: 6974653 (2005-12-01), Leung et al.

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