Photomask, photomask superimposition correcting method, and...

Details Photomask, photomask superimposition correcting method, and... Photomask, photomask superimposition correcting method, and...

2011-03-15

2011-03-15

Rosasco, Stephen (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S022000, C430S311000

Reexamination Certificate

active

07906258

ABSTRACT:
In a photomask in which a device pattern, an alignment mark and a superimposition inspection mark are formed on a light transmitting base, each of the alignment mark and the superimposition inspection mark includes a main mark portion, and first and second auxiliary pattern portions. The main mark portion is constituted of one of a space pattern and a line pattern, the pattern having a linear width to be resolved on a photosensitive film formed on a semiconductor wafer, and each of the first and second auxiliary pattern portions includes an auxiliary pattern constituted of one of a repeated pattern of a space pattern and a repeated pattern of a line pattern, the repeated pattern having a linear width not to be resolved on the photosensitive film. The pitch of the repeated pattern is equal to the minimum pitch of the device pattern.

REFERENCES:
patent: 6855997 (2005-02-01), Suwa
patent: 9-102457 (1997-04-01), None
patent: 11-251218 (1999-09-01), None
patent: 2002-64055 (2002-02-01), None
patent: 3371852 (2002-11-01), None

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