Photomask, method of lithography, and method for...

Photocopying – Projection printing and copying cameras – Methods

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C430S030000

Reexamination Certificate

active

08068213

ABSTRACT:
A photomask has a monitoring pattern configured to obtain information required for adjusting optical system of a projection lithography tool. The monitoring pattern encompasses a mask substrate and an asymmetrical diffraction grating delineated on the mask substrate, configured to generate a positive first order diffracted light and a negative first order diffracted light in different diffraction efficiencies. The asymmetrical diffraction grating includes a plurality of probing-phase shifters, disposed periodically on the mask substrate in parallel, and a plurality of opaque strips disposed on light-shielding faces of the probing-phase shifters. An asymmetrically recessed ridge implements each of the probing-phase shifters.

REFERENCES:
patent: 5300786 (1994-04-01), Brunner et al.
patent: 6088113 (2000-07-01), Kim
patent: 6091486 (2000-07-01), Kirk
patent: 6376139 (2002-04-01), Fujisawa et al.
patent: 6674511 (2004-01-01), Nomura et al.
patent: 6701512 (2004-03-01), Sutani et al.
patent: 7094504 (2006-08-01), Izuha et al.
patent: 2002/0021434 (2002-02-01), Nomura et al.
patent: 2002/0102477 (2002-08-01), Tanaka et al.
patent: 2003/0020901 (2003-01-01), Kunkel et al.
patent: 2003/0123052 (2003-07-01), Ausschnitt et al.
patent: 2007/0134563 (2007-06-01), Fukuhara et al.
patent: 3-5753 (1991-01-01), None
patent: 4-181251 (1992-06-01), None
patent: 6-302492 (1994-10-01), None
patent: 8-248620 (1996-09-01), None
patent: 8-286391 (1996-11-01), None
patent: 9-50116 (1997-02-01), None
patent: 10-69063 (1998-03-01), None
patent: 10-104817 (1998-04-01), None
patent: 11-15128 (1999-01-01), None
patent: 2001-100392 (2001-04-01), None
patent: 2001-102282 (2001-04-01), None
patent: 2001-189264 (2001-07-01), None
patent: 2001-351853 (2001-12-01), None
patent: 2002-55435 (2002-02-01), None
patent: 2002-289503 (2002-10-01), None
patent: 2002-299205 (2002-10-01), None
patent: 2003-114514 (2003-04-01), None
patent: WO 03/042629 (2003-05-01), None
Search Report dated Oct. 10, 2007, issued by the Netherlands Patent Office for Netherlands Application No. 135506.
Notification of Reasons for Refusal issued by the Japanese Patent Office dated Dec. 5, 2006, for Japanese Patent Application No. 2003-303479, and English-language translation thereof.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Photomask, method of lithography, and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photomask, method of lithography, and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photomask, method of lithography, and method for... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4292752

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.