Photomask material

Details Photomask material Photomask material

1986-03-06

1988-01-05

Kittle, John E.

Stock material or miscellaneous articles

Composite

Of quartz or glass

428428, 428446, 430 5, 148DIG19, 148DIG147, B32B 1500, B32B 1706, G03F 900

Patent

active

047176253

ABSTRACT:
A transition metal silicide film 3 is formed on a transparent substrate 1, and an oxidized transition metal silicide film 4 is formed on said transition metal silicide film 3. Dry etching can be easily applied to the transition metal silicide film 3 and the oxidized transition metal silicide film 4. Since the silicified metal films have good adhesion to the transparent substrate 1, the fine patterns can hardly be detached at the time of mask rinsing. In addition, the oxidized transition metal silicide film 4 has a low reflection factor, which prevents the lowering of the resolution.

REFERENCES:
patent: 3286312 (1965-03-01), Davis et al.
patent: 3971874 (1976-07-01), Ohta
patent: 4180596 (1979-12-01), Crowder et al.
patent: 4227944 (1981-10-01), Brown et al.
patent: 4285761 (1981-08-01), Fatula, Jr. et al.
Murarka, S. P., Refractroy Silicides for Integrated Circuits, J. Vac., Sci. Technol., vol. 17, No. 4, Jul./Aug. 1980, p. 788.

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