Photomask making method and alignment method

Details Photomask making method and alignment method Photomask making method and alignment method

2005-01-11

2005-01-11

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S022000, C430S030000

Reexamination Certificate

active

06841307

ABSTRACT:
A first on-wafer intended pattern and first and second on-wafer alignment marks have been formed in a reference layer that has been formed on a wafer by using a reference-layer-defining photomask. The first on-wafer intended pattern is a part of an isolation film pattern. The first on-wafer alignment mark has the same width and space as those of the first on-wafer intended pattern. The second on-wafer alignment mark has the same width and space as those of a second intended pattern for a layer-to-be-aligned to be formed on the reference layer. A shift Δx is caused between the first and second on-wafer alignment marks because the diffraction of light affects rough and fine patterns on the photomask differently. In performing alignment by reference to the first alignment mark, the position of a mask to be aligned is corrected by the shift Δx.

REFERENCES:
patent: 5989759 (1999-11-01), Ando et al.
patent: 6063529 (2000-05-01), Hwang

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