Photomask having a half-tone type phase shift material and chrom

Details Photomask having a half-tone type phase shift material and chrom Photomask having a half-tone type phase shift material and chrom

1997-06-20

1999-03-09

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

058798390

ABSTRACT:
A half-tone phase shift mask capable of preventing light from being transmitted in undesired areas, and thus capable of obtaining desired fine patterns. The present invention is to provide a photomask for simultaneously forming photoresist patterns on a first area in which fine patterns are to be formed and on a second area in which relatively large photoresist patterns are to be formed in a semiconductor device. The photomask comprises a transparent substrate, half-tone phase shift patterns disposed on the first area of the transparent substrate and light screen patterns disposed on the second area of the transparent substrate.

REFERENCES:
patent: 5286581 (1994-02-01), Lee
patent: 5477058 (1995-12-01), Sato
patent: 5514500 (1996-05-01), Ham
patent: 5591550 (1997-01-01), Choi et al.

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