Photomask for t-gate formation and process for fabricating the s

Details Photomask for t-gate formation and process for fabricating the s Photomask for t-gate formation and process for fabricating the s

1994-12-16

1996-08-06

Rosasco, S.

Electrical connectors

Interrelated connectors relatively movable during use

Having liquid contact

430311, 437 40, 437 44, G03F 900

Patent

active

055432530

ABSTRACT:
The present invention relates to a photomask for forming a T-shaped gate structure on a high speed FET through a photolithography, comprising opaque layer patterns 2 and 2a for defining a head portion of the T-shaped gate structure and half-tone layer patterns 3 and 3a for defining a foot portion thereof.
The half-tone film patterns composed of a chrome layer are deposited to a thickness thinner than that of the opaque layer patterns so that the half-tone layer patterns show a relatively lower transmittance to an incident beam.
The application of the photomask of the invention to the process for forming a T-shaped gate structure improves process reproducibility and leads to great cost savings.

REFERENCES:
patent: 4959326 (1990-09-01), Roman et al.
patent: 5102815 (1992-03-01), Sanchez
patent: 5155053 (1992-10-01), Atkinson
patent: 5405721 (1995-04-01), Pierrat

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