Photomask for forming high resolution photoresist patterns

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430321, 430396, G03F 900

Patent

active

055231845

ABSTRACT:
A photomask capable of forming a photoresist pattern including a chrome dot formed at the center of a reticle, adapted to attenuate light exposure energy strength concentrated at the center of the photomask, is disclosed. The chrome dot is capable of compensating for the limited resolution exhibited at edges of the pattern due to an intrinsic wave surging property of light source used and, thus, obtaining a high resolution. The photomask makes it possible to easily obtain a photoresist pattern on a highly integrated semiconductor device.

REFERENCES:
patent: 5288569 (1994-02-01), Lin

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Photomask for forming high resolution photoresist patterns does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photomask for forming high resolution photoresist patterns, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photomask for forming high resolution photoresist patterns will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-382385

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.