Photomask for double exposure and double exposure method...

Details Photomask for double exposure and double exposure method... Photomask for double exposure and double exposure method...

2005-12-22

2010-10-05

Huff, Mark F (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Registration or layout process other than color proofing

C430S394000

Reexamination Certificate

active

07807322

ABSTRACT:
A photomask for double exposure, and a double exposure method using the same are disclosed. The photomask for double exposure comprises a mask substrate divided into first and second regions equally arranged to upper and lower sides on different sides, respectively, a first mask pattern formed on the first region of the mask substrate, and a second mask pattern formed on the second region of the mask substrate. The photomask and the double exposure method using the same enable a finer photoresist pattern to be formed on a semiconductor wafer, while minimizing reduction in yield and productivity due to misalignment and replacement.

REFERENCES:
patent: 5308741 (1994-05-01), Kemp
patent: 5998068 (1999-12-01), Matsuoka
patent: 6335146 (2002-01-01), Noguchi et al.
patent: 6686102 (2004-02-01), Randall et al.
patent: 6821689 (2004-11-01), Pierrat
patent: 6876439 (2005-04-01), Galburt et al.
patent: 6881524 (2005-04-01), Cauchi et al.
patent: 2005/0105180 (2005-05-01), Mackey
patent: 10-1997-0049008 (1997-07-01), None

Affiliated with

Also associated with

Rating

Photomask for double exposure and double exposure method... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Photomask for double exposure and double exposure method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Photomask for double exposure and double exposure method... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4215740