Photomask controlling transmissivity by using an impurity-contai

Details Photomask controlling transmissivity by using an impurity-contai Photomask controlling transmissivity by using an impurity-contai

1997-03-14

1999-07-27

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

059288140

ABSTRACT:
The present invention provides a photomask for forming excellent photoresist patterns without the decrease of a critical area and the bulk effect caused by the topology of a photoresist on formed a wafer, by making the mask have different transmissivity in accordance with the topology of a wafer surface. In forming first contact holes and second contact holes in photoresist film formed on a wafer, wherein the first contact holes are deeper than the second contact holes, the photomask comprises a transparent substrate, transmissivity controlling films positioned over areas in which the second contact holes are formed, and light blocking patterns. The impurities control transmissivity, by absorbing light.

REFERENCES:
patent: 5194344 (1993-03-01), Cathey, Jr. et al.
patent: 5194345 (1993-03-01), Rolfson
patent: 5384218 (1995-01-01), Tokui et al.
patent: 5547787 (1996-08-01), Ito et al.
patent: 5563010 (1996-10-01), Hwang
patent: 5589305 (1996-12-01), Tomofuji et al.
patent: 5700606 (1997-12-01), Kobayashi et al.

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