Photomask blanks comprising transmissive embedded phase shifter

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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428 34, 428448, G03F 900

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active

054159539

ABSTRACT:
Transmissive embedded phase shifter-photomask blanks are disclosed which comprise an optically inhomogeneous attenuating film which has a transmission of at least 0.001 at the lithographic wavelength and consists essentially of a combination of multiple components with one of the components having a higher absorbance than another at the lithographic wavelength, One depth from a surface of the films has a higher content of the higher absorbing component than another depth and the profile of change in refractive index and/or extinction coefficient is gradual through the film thickness, Said profile(s) of change and the film thickness are selected to provide a phase shift of about 180.degree. (or an odd multiple thereof) at a selected lithographic wavelength.

REFERENCES:
patent: 4415262 (1983-11-01), Koyama et al.
patent: 4890309 (1989-12-01), Smith et al.
patent: 5187726 (1993-02-01), White
patent: 5230971 (1993-07-01), Alpay
Aspnes, D. E., Handbook of Optical Constants of Solids, Chap. 5, pp. 89-112, 1985.
"Si-N Attenuated Phase Shift Layer for Phase Shift Mask Application", IBM Technical Disclosure Bulletin, 35(3), 440-441, Aug. 1992.
Heavens, O. S., "Optical Properties of Thin Solid Films", Dover Publications, N.Y., 1965, 69-80.
Lin, B. J. "The Attenuated Phase-Shifting Mask", Solid State Technology, 35(1), 43-47, Jan. 1992.

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