Photomask blanks

Details Photomask blanks Photomask blanks

1994-03-28

1995-10-17

Chapman, Mark A.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

2042982, G03F 900

Patent

active

054590027

ABSTRACT:
Transmissive embedded phase shifter-photomask blanks are disclosed which comprise an optically inhomogeneous attenuating film which has a transmission of at least 0.001 and consists essentially of a combination of a metallic component and a dielectric component. One surface of the film has a higher content of metallic component than the other surface and the profile of change in extinction coefficient is gradual through the film thickness. The profile of change in extinction coefficient and the film thickness are selected to provide a phase shift of about 180.degree. (or an odd multiple thereof) at a selected wavelength.

REFERENCES:
patent: 4415262 (1983-11-01), Koyama et al.
patent: 4890309 (1989-12-01), Smith et al.
patent: 5187726 (1993-02-01), White
patent: 5230971 (1993-07-01), Alpay
B. J. Lin, Solid State Technology, pp. 43-47, Jan. 1992.
O. S. Heavens, "Optical Properties of Thin Solid Films", Dover Publications, NY, 1965, pp. 69-80.
"Si-N Attenuated Phase Shift Layer for Phase Shift Mask Application", IBM Technical Disclosure Bulletin, 35(3), 440-441, Aug. 1992.
Patent Abstract of Japan re Japanese Patent Publication No. JP4125643 (1992).
Patent Abstract of Japan re Japanese Patent Publication No. JP2242252 (1990).

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