Photomask blank, photomask and fabrication method thereof

Details Photomask blank, photomask and fabrication method thereof Photomask blank, photomask and fabrication method thereof

2005-10-21

2009-12-01

Rosasco, Stephen (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C428S430000

Reexamination Certificate

active

07625676

ABSTRACT:
A light-shieldable film is formed on one principal plane of an optically transparent substrate, and the light-shieldable film has a first light-shieldable film and a second light-shieldable film overlying the first light-shieldable film. The first light-shieldable film is a film that is not substantially etched by fluorine-based (F-based) dry etching and is primarily composed of chromium oxide, chromium nitride, chromium oxynitride or the like. The second light-shieldable film is a film that is primarily composed of a silicon-containing compound that can be etched by F-based dry etching, such as silicon oxide, silicon nitride, silicon oxynitride, silicon/transition-metal oxide, silicon/transition-metal nitride or silicon/transition-metal oxynitride.

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Communication dated Dec. 9, 2008 regarding corresponding European Patent Application No. 05 022 691.9.
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