Photomask blank and photomask

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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Details

428432, 428427, 428698, 428699, 428701, G03F 900, B32B 1706

Patent

active

047204427

ABSTRACT:
A photomask blank comprising a transparent substrate and at least two layers including a masking layer and an antireflection layer, formed thereon, wherein said masking layer is a chromium masking layer containing more than 25% by atomic ratio of nitrogen, and said antireflection layer is a chromium oxide antireflection layer containing more than 25% by atomic ratio of nitrogen.

REFERENCES:
patent: 4363846 (1982-12-01), Kaneki
patent: 4374912 (1983-02-01), Kaneki et al.
patent: 4497878 (1985-02-01), Hatano et al.
patent: 4530891 (1985-07-01), Nagarekawa et al.
patent: 4563407 (1986-01-01), Matsui et al.

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