Photomask blank and phase shift photomask

Details Photomask blank and phase shift photomask Photomask blank and phase shift photomask

1993-08-05

1995-05-30

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 14, 428209, 428469, 428472, G03F 900

Patent

active

054199883

ABSTRACT:
A phase shift photomask and a photomask blank used to produce the same. A dry etching stopper layer, which is disposed between a substrate and a light-shielding layer or between the substrate and a phase shifter layer, is made of either a film mainly composed of tin oxide nitride, which has high etching selectivity and high permeability, or an alumina film formed by sputtering, followed by heat treatment carried out in an oxidizing atmosphere, thereby enabling the required overetching to be satisfactorily performed during etching of the phase shifter layer, and thus making it possible to effect precise phase control. In addition, it is possible to eliminate the occurrence of an in-plane transmittance distribution.

REFERENCES:
patent: 4363846 (1982-12-01), Kaneki
patent: 4374912 (1983-12-01), Kaneki et al.
patent: 4440841 (1984-04-01), Tabuchi
patent: 4556608 (1985-12-01), Kaneki et al.

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