Photomask and photomask blank

Details Photomask and photomask blank Photomask and photomask blank

1981-11-10

1983-02-22

Brown, J. Travis

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430296, 430313, 428209, 428469, 428472, B32B 900

Patent

active

043749127

ABSTRACT:
In a low reflection type photomask (hard mask) having a tantalum masking film provided, through or without an intermediary low reflection layer, on a transparent substrate and further having a low reflection layer provided on the tantalum layer, use is made of a composite layer containing tantalum oxide and tantalum nitride as the low reflection layer. The etching speed of the composite layer is faster than that of the tantalum oxide layer conventionally used as low reflection layer, being substantially equal to that of the tantalum film, and there is very little lowering of the dimensional precision of the photomask obtained due to the difference in etching speeds. Further, dry etching is applicable for the above multilayer masking film containing the composite layer and the masking tantalum film, and there is little lowering of the dimensional precision even by overetching.

REFERENCES:
patent: 3857689 (1974-12-01), Koizumi et al.
patent: 3907620 (1975-09-01), Abraham et al.
patent: 4098917 (1978-07-01), Bullock et al.
patent: 4190315 (1980-02-01), Brettle et al.
patent: 4284687 (1981-08-01), Dreyer et al.

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