Photomask and method of forming resist pattern using the same

Details Photomask and method of forming resist pattern using the same Photomask and method of forming resist pattern using the same

1994-05-16

1996-01-02

Chapman, Mark A.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, 430326, G03F 900

Patent

active

054807468

ABSTRACT:
A photomask for use in forming a photoresist pattern by projection exposure, comprising opaque stripes respectively arranged on a mask substrate at a given pitch and phase shifters formed alternately on light-transmissive areas between said opaque stripes. The widths of the opaque stripes are larger than those of said light-transmissive areas whereby the edges of said phase shifters on said light-transmissive areas are prevented from being transferred to a wafer.

REFERENCES:
patent: 5045417 (1991-09-01), Okamoto
patent: 5147812 (1992-09-01), Gilbert et al.
A new phase-shifting Mask Structure for Positive Resist Process (J. Miyazaki et al.) SPIE vol. 1464, 1991.
Proceedings of the 37th Symposium on Semiconductors and Integrated Circuits Technology, Tokyo Dec. 7, 8, 1989, The Electrochemical Society of Japan, electronic Materials Committee.
A Study of Phase Shifting Mask Construction Applied for Positive Resist Process, The 51th Autum Meeting, 1990, The Japan Society of Applied Physics, Lecture No. 27p-ZG-6, p. 492.
Improving Resolution in Photolighography with a phase-shifting Mask, M. D. Levenson et al. IEEE Trans. Electron Device, V. ED29, No. 12, Dec. 1982, pp. 1828-1836.
0.3 Micron optical Lithography using a phase-shifting mask, T. Terasawa et al. SPIE Peoc. 1088, pp. 25-33, 1989.

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