Photomask and method for reducing exposure times of high...

Details Photomask and method for reducing exposure times of high... Photomask and method for reducing exposure times of high...

2005-08-02

2005-08-02

Huff, Mark F. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

C430S005000, C430S022000

Reexamination Certificate

active

06924071

ABSTRACT:
A method for reducing exposure times for high density patterns on a photomask is disclosed. The method includes moving a selected feature located in a cell between a first boundary and a second boundary from a first pattern file to a second pattern file and exposing a resist layer of a photomask blank with the first pattern file by using a step and repeat technique.

REFERENCES:
patent: 5885734 (1999-03-01), Pierrat et al.
patent: 6284413 (2001-09-01), Adams

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