Photomask and method for forming a resist pattern

Details Photomask and method for forming a resist pattern Photomask and method for forming a resist pattern

2011-07-05

2011-07-05

Huff, Mark F (Department: 1721)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S311000, C430S394000, C365S053000, C365S067000, C365S055000

Reexamination Certificate

active

07972752

ABSTRACT:
A resist pattern forming method capable of obtaining a smooth resist pattern. An exemplary method may utilize a photomask including a plurality of mask cells arranged in the form of a matrix. The length of one side of each of the mask cells may be smaller than the length corresponding to the resolution limit of the optical system of the exposure device. Each mask cell may have one or both of a light transmission region and a light shielding region, and the intensity of light passing through each mask cell may be determined by the ratio of the area of the light transmission region to the area of the mask cell. The photomask may be positioned at a vertical focus position other than the optimal focus position. The resist film may be exposed with light and may then be developed to produce the resist pattern.

REFERENCES:
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patent: 2007/0105023 (2007-05-01), Zhou et al.
patent: 2007/0122718 (2007-05-01), Mizusako et al.
patent: 08-166666 (1996-06-01), None
patent: 2003-177507 (2003-06-01), None
patent: 2007-170887 (2007-07-01), None

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